Fully Atomistic Analysis of Diffuse X-ray Scattering Spectra of Silicon Defects
نویسندگان
چکیده
Diffuse X-ray scattering is a useful method for studying defects in silicon and metals. Although the traditional approaches of analyzing experimental diffuse X-ray scattering data have given much information about the size of defects and defect clusters, they are not very well suited for determining the atomic configuration. We present a fully atomistic computational method to calculate the diffuse X-ray scattering line profile of an arbitrary atomic configuration, and compare line profiles of point defects and Frenkel pair configurations with experiment.
منابع مشابه
Atomistic simulation of diffuse x-ray scattering from defects in solids
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